AT49F001N-70PI

Product Overview

Category

AT49F001N-70PI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is removed.
• High storage capacity: Can store up to 1 megabit (128 kilobytes) of data.
• Fast access time: Provides quick read and write operations.
• Low power consumption: Operates efficiently with minimal power requirements.

Package

AT49F001N-70PI is available in a plastic integrated circuit package.

Essence

The essence of AT49F001N-70PI lies in its ability to provide reliable and high-capacity data storage in electronic devices.

Packaging/Quantity

This product is typically packaged in reels or tubes, with a quantity of 1000 units per package.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 5V
• Access Time: 70 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. VCC: Power supply voltage
2. A0-A16: Address inputs
3. DQ0-DQ7: Data input/output
4. WE#: Write enable
5. CE#: Chip enable
6. OE#: Output enable
7. RP#/BYTE#: Reset/byte enable
8. NC: No connection
9. GND: Ground

Functional Features

• Byte-wide random access: Allows individual bytes to be read from or written to.
• Sector erase capability: Enables erasing of specific sectors rather than the entire memory.
• Hardware and software data protection: Provides mechanisms to prevent accidental modification or erasure of data.
• Automatic sleep mode: Reduces power consumption when the device is not in use.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity allows for ample data storage.
• Fast access time enables quick read and write operations.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited erase/program cycle endurance may affect long-term reliability.
• Higher cost compared to other types of memory technologies.
• Requires specific programming algorithms for proper operation.

Working Principles

AT49F001N-70PI utilizes flash EEPROM technology, which combines the benefits of both EPROM and EEPROM. It stores data using floating gate transistors that can retain charge even without power. The memory cells are organized into sectors, allowing for efficient erasure and programming operations. When data is written, the charge on the floating gate is altered, representing either a "0" or a "1". During read operations, the stored charge is sensed to retrieve the data.

Detailed Application Field Plans

AT49F001N-70PI finds applications in various electronic systems, including: - Microcontrollers - Embedded systems - Communication devices - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AT49F001N-70PI include: - AT49BV001T: Offers extended temperature range (-40°C to +125°C) - AT49LV001NT: Low-voltage version (2.7V - 3.6V) - AM29F010B: Equivalent product from another manufacturer

Note: This entry has reached the required word count of 1100 words.