AT49F001N-12TC

Product Overview

Category

AT49F001N-12TC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: Can store up to 1 megabit (128 kilobytes) of data.
• Fast access time: Provides quick retrieval of stored information.
• Low power consumption: Operates efficiently with minimal power requirements.

Package

AT49F001N-12TC is available in a Thin Small Outline Package (TSOP), which ensures compactness and ease of integration into electronic circuits.

Essence

The essence of AT49F001N-12TC lies in its ability to provide reliable and high-capacity non-volatile memory storage for various electronic applications.

Packaging/Quantity

This product is typically packaged in reels, with each reel containing a specific quantity of AT49F001N-12TC chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49F001N-12TC chip has a total of 32 pins. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. RP#
29. RY/BY#
30. RESET#
31. NC
32. NC

Functional Features

• Easy integration: Compatible with standard electronic interfaces and protocols.
• High-speed data transfer: Enables efficient read and write operations.
• Sector erase capability: Allows selective erasure of specific memory sectors.
• Write protection: Provides options for protecting stored data from accidental modification.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity meets the requirements of various applications.
• Fast access time enables quick retrieval of information.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited endurance: The erase/program cycle endurance is limited to 10,000 cycles.
• Relatively higher cost compared to other types of memory.

Working Principles

AT49F001N-12TC utilizes flash EEPROM technology to store and retrieve digital information. It employs a combination of floating gate transistors and charge trapping mechanisms to retain data even when power is turned off. The memory cells are organized into sectors, allowing for selective erasure and programming of specific sections of memory.

Detailed Application Field Plans

AT49F001N-12TC finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Its high storage capacity, fast access time, and non-volatile nature make it suitable for applications that require reliable and efficient data storage.

Detailed and Complete Alternative Models

• AT49F002N-12TC: Similar to AT49F001N-12TC but with double the storage capacity (256K x 8 bits).
• AT49F004N-12TC: Offers four times the storage capacity of AT49F001N-12TC (512K x 8 bits).
• AT49F008N-12TC: Provides eight times the storage capacity of AT49F001N-12TC (1M x 8 bits).

These alternative models offer increased storage capacity while maintaining similar characteristics and functionality to AT49F001N-12TC.

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