AT49F001N-12PC

Product Overview

Category

AT49F001N-12PC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: Can store up to 1 megabit (128 kilobytes) of data.
• Fast access time: Provides quick read and write operations.
• Low power consumption: Operates efficiently with minimal power usage.

Package

AT49F001N-12PC comes in a standard 32-pin plastic dual in-line package (PDIP).

Essence

The essence of AT49F001N-12PC lies in its ability to provide reliable and high-capacity non-volatile memory storage for various electronic applications.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AT49F001N-12PC chips.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 5V
• Access Time: 120ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. NC
17. I/O0
18. I/O1
19. I/O2
20. I/O3
21. I/O4
22. I/O5
23. I/O6
24. I/O7
25. GND
26. VCC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC

Functional Features

• Easy integration: Compatible with various microcontrollers and electronic systems.
• High-speed data transfer: Allows for efficient read and write operations.
• Versatile interface: Supports both parallel and serial communication protocols.
• Sector erase capability: Enables selective erasure of specific memory sectors.
• Write protection: Provides options to protect data from accidental modification.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited endurance due to erase/program cycle limitations.
• Relatively higher cost compared to other types of memory.
• Requires additional circuitry for programming and erasing operations.

Working Principles

AT49F001N-12PC utilizes flash EEPROM technology, which combines the benefits of both electrically erasable programmable read-only memory (EEPROM) and flash memory. It stores data by trapping electrons in a floating gate, allowing for non-volatile storage. The memory cells are organized into sectors, which can be individually erased or programmed.

Detailed Application Field Plans

AT49F001N-12PC finds applications in various fields, including: 1. Embedded systems 2. Consumer electronics 3. Automotive electronics 4. Industrial control systems 5. Communication devices

Detailed and Complete Alternative Models

1. AT49F002N-12PC: 256K x 8 bits flash EEPROM
2. AT49F004N-12PC: 512K x 8 bits flash EEPROM
3. AT49F008N-12PC: 1M x 8 bits flash EEPROM

These alternative models offer higher storage capacities while maintaining similar characteristics and pin configurations.

In conclusion, AT49F001N-12PC is a reliable and high-capacity non-volatile memory device that finds applications in various electronic systems. Its fast access time, low power consumption, and sector erase capability make it suitable for a wide range of applications. However, its limited endurance and relatively higher cost should be considered when selecting an appropriate memory solution.