AT49BV1614T-11CI

Product Overview

Category

AT49BV1614T-11CI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The AT49BV1614T-11CI retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 16 megabits (2 megabytes).
• Fast access time: The device provides quick access to stored data with an access time of 110 nanoseconds.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.

Package

The AT49BV1614T-11CI is available in a compact 48-pin TSOP (Thin Small Outline Package) form factor.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The AT49BV1614T-11CI is typically packaged in reels or trays, with each package containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Organization: 2M x 8
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years
• Erase/Program Cycles: 10,000 cycles

Detailed Pin Configuration

The AT49BV1614T-11CI has a total of 48 pins, which are assigned specific functions. Here is a detailed pin configuration:

1. A0-A19: Address Inputs
2. DQ0-DQ7: Data Input/Output
3. CE: Chip Enable
4. OE: Output Enable
5. WE: Write Enable
6. RP: Ready/Busy
7. VCC: Power Supply
8. GND: Ground

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• Easy integration: The AT49BV1614T-11CI can be easily integrated into existing electronic systems due to its standard pin configuration and interface.
• High-speed operation: With a fast access time, this device enables quick data retrieval and storage.
• Reliable data retention: The non-volatile nature of the memory ensures that stored data remains intact even during power loss or system shutdown.
• Low power consumption: The AT49BV1614T-11CI operates at low power levels, making it energy-efficient and suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Non-volatile memory
• Low power consumption

Disadvantages

• Limited erase/program cycles
• Relatively high cost compared to other memory technologies

Working Principles

The AT49BV1614T-11CI utilizes flash memory technology to store and retrieve digital data. It employs a combination of floating-gate transistors and charge storage mechanisms to retain information even when power is removed. The device uses a complex system of address lines, control signals, and data lines to read from and write to specific memory locations.

Detailed Application Field Plans

The AT49BV1614T-11CI finds applications in various fields, including: 1. Computer systems: Used for storing BIOS (Basic Input/Output System) firmware and other critical system data. 2. Mobile devices: Enables storage of operating system files, user data, and multimedia content. 3. Automotive electronics: Utilized for storing firmware, configuration data, and diagnostic information in automotive control units. 4. Industrial automation: Used for data logging, configuration storage, and firmware updates in industrial control systems.

Detailed and Complete Alternative Models

1. AT49BV1614T-12CI
2. AT49BV1614T-15CI
3. AT49BV1614T-20CI
4. AT49BV1614T-25CI

(Note: The list above includes only a few alternative models. There are several other variations available with different specifications.)

In conclusion, the AT49BV1614T-11CI is a non-volatile memory device that offers high capacity, fast access time, and low power consumption. It finds applications in various fields such as computers, mobile devices, automotive electronics, and industrial automation. While it has advantages like reliable data retention and easy integration, it also has limitations such as limited erase/program cycles and relatively higher cost compared to other memory technologies.