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AT49BV002T-12JC

AT49BV002T-12JC

Product Overview

Category

AT49BV002T-12JC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

  • Non-volatile: Retains data even when power is turned off.
  • High storage capacity: 2 megabits (256 kilobytes).
  • Fast access time: 120 nanoseconds.
  • Low power consumption.
  • Wide operating voltage range: 2.7V to 3.6V.

Package

AT49BV002T-12JC is available in a standard 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of AT49BV002T-12JC lies in its ability to provide reliable and non-volatile storage for electronic systems, ensuring data integrity even during power interruptions.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AT49BV002T-12JC chips. The exact quantity may vary depending on the supplier and customer requirements.

Specifications

  • Memory Type: Flash EEPROM
  • Organization: 256K x 8 bits
  • Operating Voltage: 2.7V - 3.6V
  • Access Time: 120 ns
  • Erase/Program Suspend: Yes
  • Sector Architecture: Uniform 4 KByte
  • Data Retention: 20 years
  • Endurance: 10,000 erase/write cycles

Detailed Pin Configuration

  1. A16
  2. A15
  3. A14
  4. A13
  5. A12
  6. A11
  7. A10
  8. A9
  9. A8
  10. VCC
  11. A7
  12. A6
  13. A5
  14. A4
  15. A3
  16. A2
  17. A1
  18. A0
  19. OE#
  20. CE#
  21. WE#
  22. BYTE#
  23. NC
  24. DQ7
  25. DQ6
  26. DQ5
  27. DQ4
  28. DQ3
  29. DQ2
  30. DQ1
  31. DQ0
  32. GND

Functional Features

  • Erase and program operations can be suspended and resumed.
  • Sector architecture allows for efficient erasing and programming of specific memory regions.
  • Low power consumption extends battery life in portable devices.
  • High-speed access enables quick data retrieval.

Advantages and Disadvantages

Advantages

  • Non-volatile nature ensures data integrity during power interruptions.
  • High storage capacity accommodates a wide range of applications.
  • Fast access time enhances system performance.
  • Low power consumption prolongs battery life.

Disadvantages

  • Limited endurance of 10,000 erase/write cycles may be a concern in certain high-write applications.
  • Higher cost compared to volatile memory alternatives.

Working Principles

AT49BV002T-12JC utilizes flash EEPROM technology to store digital information. It consists of a grid of memory cells that can be electrically programmed and erased. The memory cells are organized into sectors, allowing for selective erasure and programming. When data is written or read, the appropriate control signals are applied to the device's pins, enabling the desired operation.

Detailed Application Field Plans

AT49BV002T-12JC finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Its non-volatile nature, high storage capacity, and fast access time make it suitable for applications that require reliable and efficient data storage.

Detailed and Complete Alternative Models

  • AT49BV002T-10TU
  • AT49BV002T-12TC
  • AT49BV002T-12TI
  • AT49BV002T-12VC
  • AT49BV002T-12VI

These alternative models offer similar functionality and characteristics to AT49BV002T-12JC, providing options for different package types or temperature ranges.

(Note: The above list is not exhaustive and may vary based on availability and specific requirements.)

In conclusion, AT49BV002T-12JC is a non-volatile memory device with high storage capacity, fast access time, and low power consumption. Its functional features, advantages, and application versatility make it a valuable component in various electronic systems.

Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van AT49BV002T-12JC in technische oplossingen

Sure! Here are 10 common questions and answers related to the application of AT49BV002T-12JC in technical solutions:

  1. Q: What is the AT49BV002T-12JC? A: The AT49BV002T-12JC is a 2-megabit (256K x 8) CMOS flash memory device manufactured by Atmel.

  2. Q: What are the key features of the AT49BV002T-12JC? A: Some key features include a 12ns access time, low power consumption, sector erase capability, and compatibility with a wide range of microcontrollers.

  3. Q: How can I interface the AT49BV002T-12JC with a microcontroller? A: The AT49BV002T-12JC uses a standard parallel interface, making it compatible with most microcontrollers. You can connect it using address, data, and control lines.

  4. Q: What voltage levels does the AT49BV002T-12JC support? A: The AT49BV002T-12JC supports a single power supply voltage of 2.7V to 3.6V.

  5. Q: Can I use the AT49BV002T-12JC in battery-powered applications? A: Yes, the AT49BV002T-12JC has low power consumption, making it suitable for battery-powered devices.

  6. Q: How do I erase and program the AT49BV002T-12JC? A: The AT49BV002T-12JC supports both sector erase and byte programming operations. You can use specific commands and timing sequences provided in the datasheet.

  7. Q: What is the endurance of the AT49BV002T-12JC? A: The AT49BV002T-12JC has a minimum endurance of 100,000 erase/write cycles per sector.

  8. Q: Can I use the AT49BV002T-12JC in industrial temperature environments? A: Yes, the AT49BV002T-12JC is designed to operate in a wide temperature range from -40°C to +85°C, making it suitable for industrial applications.

  9. Q: Does the AT49BV002T-12JC have any built-in security features? A: No, the AT49BV002T-12JC does not have built-in security features like hardware or software protection mechanisms.

  10. Q: Where can I find more information about the AT49BV002T-12JC? A: You can refer to the datasheet provided by Atmel, which contains detailed information about the electrical characteristics, timing diagrams, and programming instructions for the AT49BV002T-12JC.