AT49BV002NT-12TI

Product Overview

Category

AT49BV002NT-12TI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The stored data remains intact even when power is removed.
• High capacity: The AT49BV002NT-12TI has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: It operates at a maximum access time of 120 nanoseconds.
• Low power consumption: The device is designed to minimize power usage.
• Reliable: It offers high endurance and data retention capabilities.
• Easy integration: The AT49BV002NT-12TI can be easily integrated into various electronic systems.

Package

The AT49BV002NT-12TI is available in a standard 32-pin Thin Small Outline Package (TSOP).

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in electronic systems.

Packaging/Quantity

The AT49BV002NT-12TI is typically packaged in reels, with each reel containing a quantity of 250 units.

Specifications

• Memory Type: Flash
• Organization: 256K x 8 bits
• Voltage Range: 2.7V - 3.6V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

1. A16
2. A15
3. A14
4. A13
5. A12
6. A11
7. A10
8. A9
9. A8
10. A7
11. A6
12. A5
13. A4
14. A3
15. A2
16. A1
17. A0
18. VCC
19. DQ0
20. DQ1
21. DQ2
22. DQ3
23. DQ4
24. DQ5
25. DQ6
26. DQ7
27. WE#
28. CE#
29. OE#
30. BYTE#
31. RY/BY#
32. GND

Functional Features

• Byte-wide and word-wide operations
• Sector erase capability
• Chip erase capability
• Hardware and software data protection
• Automatic sleep mode
• Fast programming time

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Fast access time allows for quick data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Reliable endurance and data retention characteristics.

Disadvantages

• Limited erase/program cycle endurance compared to other memory technologies.
• Higher cost per bit compared to some alternative memory options.

Working Principles

The AT49BV002NT-12TI utilizes flash memory technology, which stores data by trapping electric charges within floating gate transistors. These trapped charges represent binary information that can be read or modified as needed. The device uses a combination of address lines, control signals, and data lines to perform read, write, and erase operations.

Detailed Application Field Plans

The AT49BV002NT-12TI is widely used in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive applications - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

• AT49BV001NT-12TI: 1 megabit non-volatile memory with similar specifications.
• AT49BV004NT-12TI: 4 megabit non-volatile memory with similar specifications.
• AT49BV008NT-12TI: 8 megabit non-volatile memory with similar specifications.

These alternative models offer different storage capacities to cater to specific application requirements.

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