AT49BV002N-12TI

Product Overview

Category

AT49BV002N-12TI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49BV002N-12TI has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: It operates at a maximum access time of 120 nanoseconds.
• Low power consumption: The device is designed to minimize power usage.
• Reliable: It offers high endurance and data retention capabilities.

Package

The AT49BV002N-12TI is available in a standard 32-pin TSOP (Thin Small Outline Package).

Essence

The essence of AT49BV002N-12TI lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The device is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of AT49BV002N-12TI chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The AT49BV002N-12TI has a total of 32 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VCC
10. WE#
11. OE#
12. CE#
13. NC
14. I/O0
15. I/O1
16. I/O2
17. I/O3
18. I/O4
19. I/O5
20. I/O6
21. I/O7
22. RY/BY#
23. RESET#
24. VSS
25. A8
26. A9
27. A10
28. A11
29. A12
30. A13
31. A14
32. A15

Functional Features

• Easy integration: The AT49BV002N-12TI can be easily integrated into existing electronic systems.
• Versatile interface: It supports a standard parallel interface for easy communication with other components.
• Flexible operations: The device offers various operations such as read, program, and erase functions.
• Hardware protection: It includes hardware protection features to prevent accidental data modification.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of digital information.
• Fast access time enables quick retrieval of stored data.
• Low power consumption helps in energy-efficient designs.
• Reliable endurance and data retention capabilities ensure long-term usability.

Disadvantages

• Limited erase/program cycle endurance compared to some other memory technologies.
• Higher cost per bit compared to certain volatile memory options.
• Larger physical size compared to some newer memory technologies.

Working Principles

The AT49BV002N-12TI utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed or erased. The device uses a combination of transistors and floating gate structures to trap and store electrical charges, representing the binary states of data.

During read operations, the stored charges are sensed and amplified to retrieve the stored data. Programming and erasing operations involve applying specific voltage levels to modify the charge trapped in the floating gate structures.

Detailed Application Field Plans

The AT49BV002N-12TI finds applications in various electronic systems, including but not limited to:

1. Embedded systems: It can be used for firmware storage in microcontrollers and other embedded devices.
2. Consumer electronics: The device is suitable for storing configuration data, firmware, or user data in devices such as set-top boxes, digital cameras, and portable media players.
3. Automotive electronics: It can be employed in automotive applications for storing critical data like calibration parameters, firmware, or event logs.
4. Industrial control systems: The AT49BV002N-12TI can be utilized in industrial control systems for storing program code, configuration data, or historical logs.

Detailed and Complete Alternative Models

1. AT45DB161E: This flash memory device offers a higher capacity of 16 megabits (2 megabytes) and supports both serial