AT45DB011B-XU

Product Overview

Category

AT45DB011B-XU belongs to the category of flash memory devices.

Use

It is primarily used for data storage and retrieval in various electronic devices.

Characteristics

• Non-volatile memory
• High-speed data transfer
• Low power consumption
• Compact size
• Durable and reliable

Package

AT45DB011B-XU is available in a small form factor package, suitable for integration into compact electronic devices.

Essence

The essence of AT45DB011B-XU lies in its ability to provide reliable and efficient data storage solutions for electronic devices.

Packaging/Quantity

AT45DB011B-XU is typically packaged individually or in reels, with varying quantities depending on the manufacturer's specifications.

Specifications

• Memory capacity: 1 megabit (128 kilobytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating voltage: 2.7V - 3.6V
• Operating temperature range: -40°C to +85°C
• Data retention: Up to 20 years
• Erase/Write cycles: 10,000 minimum

Detailed Pin Configuration

The AT45DB011B-XU has a total of 8 pins, each serving a specific function:

1. Chip Select (/CS) - Enables communication with the device.
2. Serial Clock (SCK) - Provides the clock signal for data transfer.
3. Serial Data Input (SI) - Transfers data from the microcontroller to the device.
4. Serial Data Output (SO) - Transfers data from the device to the microcontroller.
5. Write Protect (/WP) - Controls write protection for the memory array.
6. Reset (/RESET) - Resets the device to its default state.
7. VCC - Power supply input.
8. Ground (GND) - Ground reference.

Functional Features

• Page-based architecture for efficient data storage and retrieval.
• Sector erase and block erase operations for flexible memory management.
• Continuous read mode for fast sequential data access.
• Software and hardware protection features to prevent unauthorized access.
• Internal SRAM buffer for enhanced data transfer performance.

Advantages and Disadvantages

Advantages

• High-speed data transfer enables quick access to stored information.
• Low power consumption prolongs battery life in portable devices.
• Compact size allows for integration into space-constrained designs.
• Durable and reliable, ensuring data integrity over extended periods.

Disadvantages

• Limited memory capacity compared to higher-end flash memory devices.
• Limited erase/write cycles may restrict frequent data modifications.
• Relatively higher cost per megabit compared to other memory technologies.

Working Principles

AT45DB011B-XU utilizes a combination of floating gate transistors and control circuitry to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the transistor's conductive properties. During read operations, the stored charges are detected, allowing the retrieval of the stored data.

Detailed Application Field Plans

AT45DB011B-XU finds applications in various electronic devices, including but not limited to: - Consumer electronics (e.g., digital cameras, MP3 players) - Automotive systems (e.g., infotainment systems, navigation units) - Industrial equipment (e.g., data loggers, control systems) - Medical devices (e.g., patient monitoring systems, diagnostic equipment)

Detailed and Complete Alternative Models

1. AT45DB021B-XU: 2 megabit flash memory device with similar characteristics and specifications.
2. AT45DB041B-XU: 4 megabit flash memory device offering increased storage capacity.
3. AT45DB081B-XU: 8 megabit flash memory device with extended memory capabilities.

These alternative models provide options for higher memory capacities while maintaining compatibility and similar features to the AT45DB011B-XU.

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