AT29BV020-20TU

Product Overview

Category

AT29BV020-20TU belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT29BV020-20TU has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: It offers a fast access time of 20 nanoseconds.
• Low power consumption: The device operates at low power, making it suitable for battery-powered applications.

Package

The AT29BV020-20TU is available in a surface-mount TSOP package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT29BV020-20TU is typically packaged in reels and is available in quantities of 2500 units per reel.

Specifications

• Memory Type: Flash
• Organization: 256K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. GND

Functional Features

• Byte-wide access: The AT29BV020-20TU allows for byte-level read and write operations.
• Sector erase capability: It supports sector erase operations, allowing for efficient memory management.
• Hardware and software protection: The device offers various protection mechanisms to prevent unauthorized access or modification of data.
• Fast programming speed: The AT29BV020-20TU enables fast programming of data, reducing overall system latency.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of data.
• Low power consumption makes it suitable for battery-powered devices.
• Fast access time improves system performance.
• Sector erase capability enhances memory management.

Disadvantages

• Limited endurance with a maximum of 10,000 erase/write cycles.
• Relatively higher cost compared to other non-volatile memory options.

Working Principles

The AT29BV020-20TU utilizes flash memory technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. The stored information is retained even when power is removed, thanks to the floating gate transistors used in the memory cells. These transistors trap charge, representing the binary states of the stored data.

Detailed Application Field Plans

The AT29BV020-20TU finds applications in various electronic systems, including but not limited to: 1. Embedded systems 2. Consumer electronics 3. Automotive electronics 4. Industrial control systems 5. Medical devices

Detailed and Complete Alternative Models

1. AT29BV010A-15JC
2. AT29BV040A-20TC
3. AT29BV512-90TC
4. AT29BV040A-25JC
5. AT29BV010A-20TC

These alternative models offer similar functionality and characteristics to the AT29BV020-20TU, with variations in storage capacity, access time, and package type.

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