AT29BV010A-25TC

Product Overview

Category

AT29BV010A-25TC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High density: Offers a large storage capacity.
• Fast access time: Allows for quick data retrieval.
• Low power consumption: Operates efficiently with minimal power usage.

Package

AT29BV010A-25TC is available in a compact Thin Small Outline Package (TSOP).

Essence

The essence of AT29BV010A-25TC lies in its ability to provide reliable and persistent data storage in various electronic applications.

Packaging/Quantity

This product is typically packaged in reels, with each reel containing a specific quantity of AT29BV010A-25TC units.

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Erase/Write Cycle Endurance: 10,000 cycles
• Data Retention: 20 years
• Interface: Parallel

Detailed Pin Configuration

The AT29BV010A-25TC has a total of 32 pins. The pin configuration is as follows:

1. A0-A16: Address Inputs
2. DQ0-DQ7: Data Input/Output
3. CE: Chip Enable
4. OE: Output Enable
5. WE: Write Enable
6. VCC: Power Supply
7. GND: Ground

Functional Features

• Byte-wise programmable: Allows individual bytes to be programmed or erased.
• Sector erase capability: Enables erasing of entire sectors for efficient memory management.
• Automatic write timing: Simplifies the programming process by automatically handling write timings.
• Hardware and software protection: Provides security features to prevent unauthorized access or modification of data.

Advantages

• Non-volatile nature ensures data integrity even during power outages.
• High-density storage capacity meets the demands of modern electronic systems.
• Fast access time allows for quick retrieval of data.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited erase/write endurance may require careful management in applications with frequent data modifications.
• Parallel interface may not be suitable for systems requiring high-speed data transfer.

Working Principles

AT29BV010A-25TC utilizes Flash memory technology, which stores data using electrically programmable and erasable floating-gate transistors. The memory cells are organized into sectors, allowing for efficient erasure and programming operations. When data is written, charges are trapped in the floating gate, altering the transistor's behavior and storing the desired information. Reading the stored data involves detecting the transistor's conductive state.

Detailed Application Field Plans

AT29BV010A-25TC finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems

Alternative Models

1. AT29BV010A-20JC
2. AT29BV010A-30JI
3. AT29BV010A-15JC

These alternative models offer similar functionality and specifications to AT29BV010A-25TC, providing flexibility in choosing the most suitable option for specific applications.

In conclusion, AT29BV010A-25TC is a non-volatile memory device that offers high-density storage, fast access times, and low power consumption. Its byte-wise programmability, sector erase capability, and hardware/software protection make it a versatile choice for various electronic systems. However, careful management of erase/write cycles and consideration of the parallel interface's limitations are necessary.