AT28LV64B-25TC

Product Overview

Category

AT28LV64B-25TC belongs to the category of electronic memory devices.

Use

This product is primarily used for storing and retrieving digital information in various electronic systems.

Characteristics

• Non-volatile: The AT28LV64B-25TC retains stored data even when power is removed.
• High capacity: It has a storage capacity of 64 kilobits (8 kilobytes).
• Low power consumption: The device operates on low power, making it suitable for battery-powered applications.
• Fast access time: With a maximum access time of 250 nanoseconds, it ensures quick data retrieval.
• Wide operating voltage range: The AT28LV64B-25TC can operate within a voltage range of 2.7V to 5.5V.

Package

The AT28LV64B-25TC is available in a Thin Small Outline Package (TSOP) with 32 pins.

Essence

The essence of the AT28LV64B-25TC lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AT28LV64B-25TC devices.

Specifications

• Memory Type: Electrically Erasable Programmable Read-Only Memory (EEPROM)
• Organization: 8 kilobytes x 8 bits
• Operating Voltage Range: 2.7V to 5.5V
• Access Time: 250 nanoseconds (maximum)
• Data Retention: 10 years (minimum)
• Endurance: 100,000 write cycles (minimum)

Detailed Pin Configuration

The AT28LV64B-25TC has a total of 32 pins, which are assigned specific functions. The pin configuration is as follows:

1. A0: Address Input
2. A1: Address Input
3. A2: Address Input
4. A3: Address Input
5. A4: Address Input
6. A5: Address Input
7. A6: Address Input
8. A7: Address Input
9. VSS: Ground
10. CE: Chip Enable
11. OE: Output Enable
12. WE: Write Enable
13. I/O0: Data Input/Output
14. I/O1: Data Input/Output
15. I/O2: Data Input/Output
16. I/O3: Data Input/Output
17. I/O4: Data Input/Output
18. I/O5: Data Input/Output
19. I/O6: Data Input/Output
20. I/O7: Data Input/Output
21. NC: No Connection
22. NC: No Connection
23. NC: No Connection
24. VCC: Power Supply
25. A8: Address Input
26. A9: Address Input
27. A10: Address Input
28. A11: Address Input
29. A12: Address Input
30. A13: Address Input
31. A14: Address Input
32. A15: Address Input

Functional Features

The AT28LV64B-25TC offers the following functional features:

• Byte-wise Read and Write Operations: The device allows individual bytes to be read from or written to, providing flexibility in data manipulation.
• Block Erase Capability: It supports block erase operations, enabling efficient erasure of multiple bytes simultaneously.
• Software and Hardware Protection: The AT28LV64B-25TC includes protection mechanisms to prevent accidental modification or erasure of stored data.
• Automatic Page Write: This feature simplifies the programming process by automatically writing data to consecutive memory locations.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High storage capacity for various applications.
• Low power consumption extends battery life in portable devices.
• Fast access time allows for quick data retrieval.
• Wide operating voltage range enhances compatibility with different systems.

Disadvantages

• Limited endurance of write cycles compared to other memory technologies.
• Relatively higher cost per bit compared to some alternative memory options.

Working Principles

The AT28LV64B-25TC utilizes EEPROM technology, which combines the benefits of both electrically erasable and programmable read-only memory. It stores data using floating-gate transistors that can be electrically programmed and erased. The device operates by applying specific voltages to control pins, enabling read, write, and erase operations.

Detailed Application Field Plans

The AT28LV64B-25TC finds application in various electronic systems, including but not limited to:

1. Embedded Systems: Used for storing firmware, configuration data, and system parameters.
2. Consumer Electronics