AT27BV512-12RC

Product Overview

Category

AT27BV512-12RC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: 512 kilobits (64 kilobytes).
• Low power consumption.
• Fast access time: 120 nanoseconds.
• Wide operating voltage range: 2.7V to 5.5V.

Package

AT27BV512-12RC is available in a compact and durable package, suitable for integration into various electronic devices.

Essence

The essence of AT27BV512-12RC lies in its ability to provide reliable and non-volatile storage for digital data.

Packaging/Quantity

AT27BV512-12RC is typically packaged in trays or tubes, with quantities varying based on customer requirements.

Specifications

• Memory Type: EEPROM (Electrically Erasable Programmable Read-Only Memory)
• Organization: 64K x 8 bits
• Operating Voltage: 2.7V to 5.5V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: 32-lead PDIP (Plastic Dual In-Line Package)

Detailed Pin Configuration

1. A0: Address Input
2. A1: Address Input
3. A2: Address Input
4. A3: Address Input
5. A4: Address Input
6. A5: Address Input
7. A6: Address Input
8. A7: Address Input
9. VSS: Ground
10. CE: Chip Enable
11. OE: Output Enable
12. WE: Write Enable
13. I/O0: Data Input/Output
14. I/O1: Data Input/Output
15. I/O2: Data Input/Output
16. I/O3: Data Input/Output
17. I/O4: Data Input/Output
18. I/O5: Data Input/Output
19. I/O6: Data Input/Output
20. I/O7: Data Input/Output
21. NC: No Connection
22. NC: No Connection
23. NC: No Connection
24. VCC: Power Supply
25. A8: Address Input
26. A9: Address Input
27. A10: Address Input
28. A11: Address Input
29. A12: Address Input
30. A13: Address Input
31. A14: Address Input
32. A15: Address Input

Functional Features

• High-speed read and write operations.
• Low power consumption, making it suitable for battery-powered devices.
• Non-volatile storage ensures data retention even during power loss.
• Easy integration into various electronic systems.
• Compatibility with a wide range of microcontrollers and processors.

Advantages

• Reliable and durable non-volatile memory solution.
• Fast access time allows for efficient data retrieval.
• Low power consumption extends battery life in portable devices.
• Wide operating voltage range enables compatibility with different power supply levels.
• Compact package facilitates easy integration into electronic systems.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per bit compared to some alternative memory options.
• Limited endurance for write cycles compared to certain newer memory technologies.

Working Principles

AT27BV512-12RC utilizes EEPROM technology, which allows for electrically erasing and reprogramming the memory cells. The memory cells store data as electrical charges, which can be selectively modified using appropriate voltage levels. The chip's control inputs, such as Chip Enable (CE), Output Enable (OE), and Write Enable (WE), enable the user to perform read and write operations on specific memory locations.

Detailed Application Field Plans

AT27BV512-12RC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

1. AT28C64B-15PU: 64K (8K x 8) Parallel EEPROM
2. AT24C256C-SSHL-T: 256Kbit (32K x 8) Serial EEPROM
3. AT45DB161E-SHN-B: 16Mbit DataFlash Memory
4. AT93C46D-SSHDT: 1Kbit (128 x 8) Microwire Serial EEPROM
5. AT25SF041-SSHD-T: 4Mbit SPI Serial Flash Memory

These alternative models offer different storage capacities, interface options, and features to cater to diverse application requirements