AT24C11N-10SI-1.8

Product Overview

Category

AT24C11N-10SI-1.8 belongs to the category of Serial EEPROM (Electrically Erasable Programmable Read-Only Memory) integrated circuits.

Use

This product is commonly used for non-volatile storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile memory: The data stored in AT24C11N-10SI-1.8 is retained even when power is removed.
• High storage capacity: This EEPROM chip has a storage capacity of 11 kilobits (1,408 bytes).
• Serial interface: It utilizes a two-wire serial interface (I2C) for communication with other devices.
• Low power consumption: AT24C11N-10SI-1.8 operates at low power levels, making it suitable for battery-powered applications.
• Wide operating voltage range: It can operate within a voltage range of 1.7V to 5.5V.
• Extended temperature range: This chip can withstand temperatures ranging from -40°C to +85°C.

Package and Quantity

AT24C11N-10SI-1.8 is available in an SOIC (Small Outline Integrated Circuit) package. It is typically sold in reels containing a quantity of 250 units.

Specifications

• Storage Capacity: 11 kilobits (1,408 bytes)
• Interface: I2C (Two-wire serial interface)
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SOIC
• Package Quantity: 250 units per reel

Pin Configuration

The AT24C11N-10SI-1.8 chip has a total of 8 pins. The pin configuration is as follows:

1. A0: Address Input
2. A1: Address Input
3. A2: Address Input
4. GND: Ground
5. SDA: Serial Data Input/Output
6. SCL: Serial Clock Input
7. WP: Write Protect
8. VCC: Power Supply

Functional Features

• Read and write operations: AT24C11N-10SI-1.8 allows for both read and write operations, enabling data storage and retrieval.
• Random access: It supports random access to any memory location, allowing efficient data manipulation.
• Hardware write protection: The WP pin can be used to protect the stored data from accidental overwriting.
• Page write mode: This chip supports page write mode, which enables multiple bytes to be written in a single operation.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Low power consumption makes it suitable for battery-powered devices.
• Wide operating voltage range provides flexibility in different systems.
• Extended temperature range allows usage in harsh environments.

Disadvantages

• Limited storage capacity compared to other EEPROM options.
• Slower write speed compared to some other memory technologies.
• Requires an I2C interface for communication, which may not be compatible with all systems.

Working Principles

AT24C11N-10SI-1.8 utilizes electrically erasable programmable read-only memory technology. It stores data in a grid of memory cells that can be individually addressed and modified. The serial interface (I2C) allows for easy communication between the chip and other devices. When reading or writing data, the appropriate memory address is selected, and the data is transferred through the serial interface.

Detailed Application Field Plans

AT24C11N-10SI-1.8 can be used in various applications, including but not limited to: - Microcontrollers and embedded systems - Data logging devices - Industrial automation systems - Automotive electronics - Smart home devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AT24C11N-10SI-1.8 are: - AT24C01A: 1 kilobit (128 bytes) capacity - AT24C02C: 2 kilobits (256 bytes) capacity - AT24C16A: 16 kilobits (2,048 bytes) capacity - AT24C64D: 64 kilobits (8,192 bytes) capacity

These alternative models provide different storage capacities to suit specific application requirements.

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