11LC080T-E/SN

Product Overview

Category: Integrated Circuit (IC)

Use: Non-volatile Memory

Characteristics: - Low power consumption - High-speed operation - Small form factor - Reliable data retention

Package: SOIC (Small Outline Integrated Circuit)

Essence: The 11LC080T-E/SN is a non-volatile memory IC that provides reliable data storage with low power consumption and high-speed operation. It is commonly used in various electronic devices.

Packaging/Quantity: The 11LC080T-E/SN is available in a SOIC package, which is a small outline integrated circuit. It is typically sold in reels or tubes containing multiple units.

Specifications

• Memory Size: 8 kilobits (1 kilobyte)
• Organization: 1024 x 8 bits
• Supply Voltage: 2.5V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 200 years
• Write Endurance: 1 million write cycles

Detailed Pin Configuration

The 11LC080T-E/SN has a total of 8 pins, each serving a specific function:

1. VCC: Power supply voltage input
2. GND: Ground reference
3. CS: Chip select input for device activation
4. SCK: Serial clock input for data transfer
5. SI: Serial data input for programming or reading
6. SO: Serial data output for reading
7. WP: Write protect input for hardware protection
8. HOLD: Hold input for suspending operations temporarily

Functional Features

• Serial communication interface for easy integration with microcontrollers
• Byte-level read and write operations for flexible data manipulation
• Built-in write protection mechanism for enhanced security
• Low power consumption for energy-efficient applications
• High-speed operation for quick data access

Advantages and Disadvantages

Advantages: - Small form factor allows for space-saving designs - Reliable data retention ensures long-term storage of critical information - Wide operating voltage range enables compatibility with various systems - High endurance supports frequent write operations without degradation

Disadvantages: - Limited memory size may not be sufficient for certain applications - Lack of built-in error correction mechanisms may require external measures - Relatively higher cost compared to other non-volatile memory options

Working Principles

The 11LC080T-E/SN utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping charges in a floating gate, which can be electrically modified through programming and erasing operations. The stored charge determines the logic state of each memory cell, allowing for non-volatile data storage.

Detailed Application Field Plans

The 11LC080T-E/SN is widely used in various electronic devices and systems, including but not limited to: - Consumer electronics (e.g., smartphones, tablets) - Automotive electronics (e.g., infotainment systems, engine control units) - Industrial automation (e.g., PLCs, motor drives) - Medical devices (e.g., patient monitoring systems, diagnostic equipment) - Smart home appliances (e.g., smart thermostats, security systems)

Detailed and Complete Alternative Models

1. 11LC160-I/P: 16 kilobits (2 kilobytes) EEPROM, DIP package
2. 11LC320-I/SN: 32 kilobits (4 kilobytes) EEPROM, SOIC package
3. 11LC640T-I/OT: 64 kilobits (8 kilobytes) EEPROM, TSSOP package
4. 11LC128-I/MS: 128 kilobits (16 kilobytes) EEPROM, MSOP package

These alternative models offer different memory sizes and package options to suit specific application requirements.

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