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IRFR3303PBF

IRFR3303PBF

Product Overview

  • Category: Power MOSFET
  • Use: Switching applications in power supplies, motor control, and other high current circuits
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: TO-252 (DPAK)
  • Essence: Efficient power management
  • Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

  • Voltage Rating: 30V
  • Continuous Drain Current: 20A
  • RDS(ON): 5.5mΩ
  • Gate Threshold Voltage: 2V - 4V
  • Total Gate Charge: 24nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • Fast switching speed for improved efficiency
  • Low on-resistance minimizes power loss
  • High voltage capability for versatile applications

Advantages

  • Enhanced power management capabilities
  • Suitable for high current circuits
  • Reliable performance in demanding environments

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during installation

Working Principles

The IRFR3303PBF operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current in a circuit. By modulating the voltage applied to the gate terminal, the device can efficiently switch between conducting and non-conducting states, enabling precise control over power flow.

Detailed Application Field Plans

  1. Power Supplies: Utilized in DC-DC converters and voltage regulation circuits.
  2. Motor Control: Enables efficient control of motor speed and direction in various industrial and automotive applications.
  3. High Current Circuits: Ideal for use in high-power LED lighting systems and audio amplifiers.

Detailed and Complete Alternative Models

  1. IRFR3709ZPBF: Similar specifications with higher voltage rating
  2. IRFR3410PBF: Lower on-resistance with comparable current rating
  3. IRFR3205PBF: Higher current rating with slightly higher on-resistance

This comprehensive entry provides an in-depth understanding of the IRFR3303PBF, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, making it a valuable resource for professionals and enthusiasts in the electronics industry.

Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van IRFR3303PBF in technische oplossingen

  1. What is the IRFR3303PBF used for?

    • The IRFR3303PBF is a power MOSFET designed for various switching applications, such as motor control, DC-DC converters, and power supplies.
  2. What is the maximum drain-source voltage of the IRFR3303PBF?

    • The maximum drain-source voltage of the IRFR3303PBF is 30 volts.
  3. What is the maximum continuous drain current of the IRFR3303PBF?

    • The maximum continuous drain current of the IRFR3303PBF is 110 amperes.
  4. What is the on-state resistance (RDS(on)) of the IRFR3303PBF?

    • The on-state resistance of the IRFR3303PBF is typically around 2.5 milliohms.
  5. What are the typical gate-source voltage (VGS) characteristics of the IRFR3303PBF?

    • The typical gate-source voltage (VGS) required to fully enhance the MOSFET is around 10 volts.
  6. Can the IRFR3303PBF be used in high-frequency switching applications?

    • Yes, the IRFR3303PBF is suitable for high-frequency switching due to its fast switching characteristics and low gate charge.
  7. Does the IRFR3303PBF require a heatsink for operation?

    • It is recommended to use a heatsink with the IRFR3303PBF, especially when operating at high currents or in high ambient temperatures.
  8. What are the typical thermal characteristics of the IRFR3303PBF?

    • The IRFR3303PBF has a low thermal resistance and is capable of dissipating heat efficiently when properly mounted on a heatsink.
  9. Is the IRFR3303PBF suitable for automotive applications?

    • Yes, the IRFR3303PBF is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.
  10. Are there any important considerations for driving the IRFR3303PBF?

    • It is important to ensure proper gate drive voltage and current to fully enhance the MOSFET and minimize switching losses. Additionally, attention should be given to minimizing inductive voltage spikes during switching.