IRFR12N25DCPBF

Introduction

The IRFR12N25DCPBF is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The IRFR12N25DCPBF is commonly used in power supply circuits, motor control, and other high-power switching applications.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate drive power.
• Package: TO-252 (DPAK)
• Essence: The essence of this component lies in its ability to efficiently control high currents and voltages in various electronic circuits.
• Packaging/Quantity: Typically packaged in reels or tubes containing a specific quantity based on manufacturer specifications.

Specifications

• Voltage Rating: 250V
• Current Rating: 12A
• On-State Resistance: 0.28Ω
• Gate Threshold Voltage: 2V
• Power Dissipation: 100W
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IRFR12N25DCPBF features a standard TO-252 (DPAK) package with three pins: 1. Gate (G): Input for controlling the switching operation. 2. Drain (D): Connection to the load or power supply. 3. Source (S): Common reference point for the MOSFET.

Functional Features

• High Current and Voltage Handling: Capable of handling high currents and voltages, making it suitable for power applications.
• Low On-State Resistance: Minimizes power losses and heat generation during operation.
• Fast Switching Speed: Enables rapid switching transitions, beneficial for high-frequency applications.

Advantages and Disadvantages

Advantages

• Efficient power control in high-current circuits.
• Low power dissipation due to low on-state resistance.
• Fast switching speed for high-frequency applications.

Disadvantages

• Susceptible to damage from voltage and current spikes if not properly protected.
• Gate drive voltage requirements may limit compatibility with certain control circuits.

Working Principles

The IRFR12N25DCPBF operates based on the principle of field-effect transistors. When a sufficient voltage is applied to the gate terminal, it creates an electric field that allows current to flow between the drain and source terminals. By modulating the gate voltage, the MOSFET can effectively control the flow of current through the circuit.

Detailed Application Field Plans

The IRFR12N25DCPBF finds extensive use in various applications, including: - Power Supply Circuits: Regulating and controlling power delivery in DC power supplies. - Motor Control: Driving and controlling motors in industrial and automotive systems. - Inverter Circuits: Converting DC power to AC for use in appliances and renewable energy systems.

Detailed and Complete Alternative Models

• IRF540N: Similar power MOSFET with a TO-220 package.
• IRF3205: Higher current rating MOSFET suitable for heavy-duty applications.
• IRF9540N: Complementary P-channel MOSFET for use in H-bridge configurations.

In conclusion, the IRFR12N25DCPBF serves as a crucial component in power electronics, offering efficient power control and high reliability in various applications.

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