IRFB7530PBF

Product Overview

Category

The IRFB7530PBF belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching circuits.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The IRFB7530PBF is typically available in a TO-220AB package.

Essence

The essence of the IRFB7530PBF lies in its ability to efficiently handle high power and voltage levels while minimizing losses.

Packaging/Quantity

It is usually packaged in reels or tubes, with varying quantities depending on the supplier.

Specifications

• Drain-Source Voltage (Vdss): 100V
• Continuous Drain Current (Id): 160A
• RDS(ON) (Max) @ VGS = 10V: 3.5mΩ
• Gate-Source Voltage (Vgs): ±20V
• Total Gate Charge (Qg): 150nC

Detailed Pin Configuration

The IRFB7530PBF typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability allows for use in various power applications.
• Low on-resistance minimizes power losses and improves efficiency.
• Fast switching speed enables rapid response in switching circuits.

Advantages

• Suitable for high-power applications
• Low conduction losses due to low on-resistance
• Fast switching speed reduces switching losses

Disadvantages

• Higher gate capacitance compared to some alternative models
• May require careful consideration of driving circuitry due to high gate-source voltage

Working Principles

The IRFB7530PBF operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IRFB7530PBF is well-suited for use in: - Power supply units - Motor control systems - High-power switching circuits

Detailed and Complete Alternative Models

Some alternative models to the IRFB7530PBF include: - IRFB7534PbF - IRFB7537PbF - IRFB7540PbF

In conclusion, the IRFB7530PBF is a versatile power MOSFET suitable for various high-power applications, offering high voltage capability, low on-resistance, and fast switching speed. While it has certain advantages, such as suitability for high-power applications and low conduction losses, it also has considerations, including higher gate capacitance and gate-source voltage requirements. Understanding its specifications, pin configuration, functional features, and application field plans can aid in effectively utilizing this component in diverse electronic designs.