IDT71V416YS10PHI

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed static random access memory (SRAM) - Low power consumption - 4 Megabit (4M) capacity - 10 nanosecond (ns) access time - Single power supply of 5 volts (V) - Industrial temperature range (-40°C to +85°C)

Package: Plastic Small Outline J-Lead (SOJ)

Essence: The IDT71V416YS10PHI is a high-performance SRAM designed for use in various electronic devices that require fast and reliable data storage.

Packaging/Quantity: The IDT71V416YS10PHI is typically packaged in reels or tubes, with a quantity of 50 units per reel/tube.

Specifications

• Organization: 512K words x 8 bits
• Voltage Range: 4.5V to 5.5V
• Access Time: 10 ns
• Standby Current: 20 mA (max)
• Operating Current: 100 mA (max)
• Data Retention Voltage: 2V (min)
• Package Dimensions: 32-pin SOJ, 400 mils body width

Detailed Pin Configuration

The IDT71V416YS10PHI has a total of 32 pins, which are assigned specific functions as follows:

1. A0-A18: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. VCC: Power Supply (+5V)
7. GND: Ground (0V)

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures energy efficiency in electronic devices.
• Reliable data storage with a capacity of 4 Megabits.
• Wide operating temperature range makes it suitable for industrial applications.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low power consumption prolongs battery life in portable devices. - High reliability ensures data integrity. - Suitable for industrial environments due to wide temperature range.

Disadvantages: - Limited storage capacity compared to newer memory technologies. - Higher cost per bit compared to larger capacity memory devices.

Working Principles

The IDT71V416YS10PHI operates based on static random access memory (SRAM) technology. It stores data using flip-flops, which retain information as long as power is supplied. The device uses address inputs to select specific memory locations and read/write operations are controlled by the WE (Write Enable) and OE (Output Enable) signals.

Detailed Application Field Plans

The IDT71V416YS10PHI can be used in various electronic systems that require high-speed and reliable data storage, such as: - Computer systems - Networking equipment - Communication devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V416L: Similar to IDT71V416YS10PHI but operates at a lower voltage range (3.3V).
2. IDT71V416S: Same capacity and speed as IDT71V416YS10PHI but available in a different package (TSOP).

These alternative models provide options with different voltage requirements or package types while maintaining similar performance characteristics.

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