IDT71V416YL12PHI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Thin Small Outline Package (TSOP)
• Essence: Provides high-performance data storage and retrieval capabilities for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 4 Megabits (4M x 1)
• Operating Voltage: 3.3V ± 0.3V
• Access Time: 12 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 5 mA
• Package Dimensions: 12.8mm x 20.2mm x 1.0mm

Pin Configuration

The IDT71V416YL12PHI8 has a total of 44 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. VCC
18. OE#
19. WE#
20. I/O0
21. I/O1
22. I/O2
23. I/O3
24. I/O4
25. I/O5
26. I/O6
27. I/O7
28. I/O8
29. I/O9
30. I/O10
31. I/O11
32. I/O12
33. I/O13
34. I/O14
35. I/O15
36. VCC
37. GND
38. CE#
39. UB#
40. LB#
41. CLK
42. CLK#
43. NC
44. NC

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable and efficient data transfer.
• Static random-access memory technology provides non-volatile storage capabilities.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low standby current helps conserve power. - Compact package size allows for space-saving integration into electronic devices. - Reliable data retention ensures long-term storage reliability.

Disadvantages: - Limited memory size may not be sufficient for certain applications requiring larger storage capacity. - Higher cost compared to other memory technologies like NAND flash.

Working Principles

The IDT71V416YL12PHI8 operates as a synchronous SRAM, utilizing static memory cells to store and retrieve data. It employs an address bus for selecting specific memory locations and a data bus for reading from or writing to those locations. The device is controlled by various control signals such as OE# (Output Enable), WE# (Write Enable), CE# (Chip Enable), UB# (Upper Byte Enable), and LB# (Lower Byte Enable). These signals facilitate the proper functioning of the memory device.

Detailed Application Field Plans

The IDT71V416YL12PHI8 can be used in various electronic systems that require high-speed and low-power memory solutions. Some potential application fields include:

1. Embedded Systems: Used as a data storage component in microcontrollers and digital signal processors.
2. Networking Equipment: Employed in routers, switches, and network interface cards for buffering and caching purposes.
3. Telecommunications: Utilized in base stations, modems, and communication devices for storing temporary data.
4. Industrial Automation: Integrated into programmable logic controllers (PLCs) and industrial control systems for data buffering and processing.

Detailed Alternative Models

1. IDT71V416S: Similar to IDT71V416YL12PHI8 but operates at a different access time of 10 ns.
2. IDT71V416Z: Offers the same memory size and access time as IDT71V416YL12PHI8 but comes in a different package (SOJ-44).

These alternative models provide similar functionality and can be considered as substitutes for the IDT71V416YL12PHI8 based on specific requirements and compatibility with the target system.

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