813253BGLF

Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: SOT-23
Essence: Bipolar Junction Transistor (BJT)
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications and Parameters

Collector Current (Ic): 100mA
Collector-Emitter Voltage (Vce): 50V
Emitter-Base Voltage (Veb): 5V
Power Dissipation (Pd): 350mW
Transition Frequency (ft): 250MHz
Noise Figure (NF): 2dB
Gain-Bandwidth Product (fT): 500MHz

Pin Configuration

The 813253BGLF transistor has the following pin configuration:

Base (B)
Emitter (E)
Collector (C)

Functional Characteristics

High voltage gain
Low noise figure
Fast switching speed
Wide frequency response
Good linearity

Advantages and Disadvantages

Advantages: - High gain allows for signal amplification in various applications - Low noise figure ensures minimal distortion in signal processing - Fast switching speed enables quick response in switching circuits

Disadvantages: - Limited power dissipation capability - Restricted maximum collector-emitter voltage

Applicable Range of Products

The 813253BGLF transistor is commonly used in electronic devices that require signal amplification, such as audio amplifiers, radio receivers, and communication systems.

Working Principles

The 813253BGLF transistor operates based on the principles of bipolar junction transistors (BJTs). It amplifies weak input signals by controlling the current flow between its collector and emitter terminals.

Detailed Application Field Plans

The 813253BGLF transistor can be applied in the following fields:

Audio Amplification: Enhancing audio signals for speakers and headphones.
Radio Frequency (RF) Amplification: Boosting weak RF signals in radio receivers.
Communication Systems: Amplifying signals in wireless communication devices.

Detailed Alternative Models

Some alternative models to the 813253BGLF transistor include:

2N3904
BC547
2SC945
PN2222
MPSA18

5 Common Technical Questions and Answers

Q: What is the maximum collector current of the 813253BGLF transistor? A: The maximum collector current is 100mA.
Q: What is the power dissipation capability of the 813253BGLF transistor? A: The power dissipation capability is 350mW.
Q: What is the noise figure of the 813253BGLF transistor? A: The noise figure is 2dB.
Q: What is the gain-bandwidth product of the 813253BGLF transistor? A: The gain-bandwidth product is 500MHz.
Q: What is the package type of the 813253BGLF transistor? A: The package type is SOT-23.

This encyclopedia entry provides an overview of the 813253BGLF transistor, including its basic information, specifications, pin configuration, functional characteristics, advantages and disadvantages, applicable range of products, working principles, detailed application field plans, alternative models, and common technical questions and answers.