71V424S12PHGI8

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory chip
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 48-pin TSOP (Thin Small Outline Package)
• Essence: Stores and retrieves digital information in electronic devices
• Packaging/Quantity: Individually packaged, typically sold in reels or trays

Specifications

• Organization: 4 Meg x 4-bit
• Voltage Supply: 3.3V
• Access Time: 12 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Power Consumption: Low power, suitable for battery-powered devices

Detailed Pin Configuration

The 71V424S12PHGI8 has a 48-pin TSOP package with the following pin configuration:

1. VDDQ - Power supply for I/O buffers
2. DQ0 - Data input/output bit 0
3. DQ1 - Data input/output bit 1
4. DQ2 - Data input/output bit 2
5. DQ3 - Data input/output bit 3
6. GND - Ground
7. DQ4 - Data input/output bit 4
8. DQ5 - Data input/output bit 5
9. DQ6 - Data input/output bit 6
10. DQ7 - Data input/output bit 7
11. VDD - Power supply for internal circuitry
12. WE - Write Enable
13. A0 - Address bit 0
14. A1 - Address bit 1
15. A2 - Address bit 2
16. A3 - Address bit 3
17. A4 - Address bit 4
18. A5 - Address bit 5
19. A6 - Address bit 6
20. A7 - Address bit 7
21. A8 - Address bit 8
22. A9 - Address bit 9
23. A10 - Address bit 10
24. A11 - Address bit 11
25. CE1 - Chip Enable 1
26. CE2 - Chip Enable 2
27. OE - Output Enable
28. VSSQ - Ground for I/O buffers
29. DQ8 - Data input/output bit 8
30. DQ9 - Data input/output bit 9
31. DQ10 - Data input/output bit 10
32. DQ11 - Data input/output bit 11
33. DQ12 - Data input/output bit 12
34. DQ13 - Data input/output bit 13
35. DQ14 - Data input/output bit 14
36. DQ15 - Data input/output bit 15
37. VDDQ - Power supply for I/O buffers
38. DQ16 - Data input/output bit 16
39. DQ17 - Data input/output bit 17
40. DQ18 - Data input/output bit 18
41. DQ19 - Data input/output bit 19
42. DQ20 - Data input/output bit 20
43. DQ21 - Data input/output bit 21
44. DQ22 - Data input/output bit 22
45. DQ23 - Data input/output bit 23
46. VDDQ - Power supply for I/O buffers
47. NC - No connection
48. VSS - Ground

Functional Features

• High-speed operation allows for quick data access and retrieval
• Low-power consumption makes it suitable for battery-powered devices
• Synchronous operation ensures data integrity and reliability
• Static random-access memory (SRAM) technology provides fast read/write capabilities
• 4 Meg x 4-bit organization allows for efficient storage of digital information

Advantages and Disadvantages

Advantages: - High-speed performance - Low-power consumption - Reliable data storage and retrieval - Compact package size - Suitable for various applications

Disadvantages: - Limited storage capacity compared to other memory technologies - Relatively higher cost per bit compared to larger memory chips

Working Principles

The 71V424S12PHGI8 operates based on static random-access memory (SRAM) technology. It stores digital information in a volatile manner, meaning the data is lost when power is removed. The chip uses synchronous operation, where data is transferred in synchronization with an external clock signal. This ensures reliable and accurate data access.

Detailed Application Field Plans

The 71V424S12PHGI8 can be used in various electronic devices that require high-speed and low-power memory. Some potential application fields include:

1. Mobile devices: Smartphones, tablets, portable media players