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SBR8E45P5-13

SBR8E45P5-13 Product Overview

Introduction

The SBR8E45P5-13 is a semiconductor device belonging to the category of Schottky Barrier Rectifiers. This entry provides an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models of the SBR8E45P5-13.

Basic Information Overview

  • Category: Semiconductor Device
  • Use: Rectification in electronic circuits
  • Characteristics: High efficiency, low forward voltage drop, fast switching speed
  • Package: TO-220AB
  • Essence: Schottky Barrier Rectifier
  • Packaging/Quantity: Standard packaging, quantity per package varies by manufacturer

Specifications

  • Voltage Rating: 45V
  • Average Forward Current: 8A
  • Peak Forward Surge Current: 150A
  • Operating Temperature Range: -65°C to +175°C
  • Storage Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The SBR8E45P5-13 typically has three pins: 1. Anode (A) 2. Cathode (K) 3. Gate (G)

Functional Features

  • Low forward voltage drop
  • Fast reverse recovery time
  • High-frequency operation capability
  • Low power loss
  • High reliability

Advantages and Disadvantages

Advantages

  • High efficiency
  • Fast switching speed
  • Suitable for high-frequency applications
  • Low power loss

Disadvantages

  • Limited voltage rating compared to other rectifier types
  • Sensitivity to temperature variations

Working Principles

The SBR8E45P5-13 operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for faster switching and lower forward voltage drop compared to conventional PN-junction diodes. When a forward bias is applied, the rectifier conducts current with minimal voltage drop, making it suitable for high-efficiency applications.

Detailed Application Field Plans

The SBR8E45P5-13 is commonly used in the following applications: - Switching power supplies - DC-DC converters - Voltage clamping circuits - Reverse polarity protection circuits - Solar panel bypass diodes

Detailed and Complete Alternative Models

Some alternative models to the SBR8E45P5-13 include: - SBR10E45P5-13 - SBR12E45P5-13 - SBR8E60P5-13 - SBR8E45P5-15

In conclusion, the SBR8E45P5-13 is a versatile Schottky Barrier Rectifier with high efficiency, fast switching speed, and suitability for various electronic applications.

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Noem 10 veelgestelde vragen en antwoorden met betrekking tot de toepassing van SBR8E45P5-13 in technische oplossingen

  1. What is SBR8E45P5-13?

    • SBR8E45P5-13 is a Schottky barrier rectifier diode designed for high efficiency and low power loss in various technical solutions.
  2. What are the key features of SBR8E45P5-13?

    • The key features include low forward voltage drop, high current capability, fast switching speed, and high surge capability.
  3. In what technical applications can SBR8E45P5-13 be used?

    • SBR8E45P5-13 is commonly used in power supplies, LED lighting, motor control, and automotive electronics.
  4. What is the maximum forward voltage of SBR8E45P5-13?

    • The maximum forward voltage is typically around 0.55V at a forward current of 8A.
  5. What is the reverse recovery time of SBR8E45P5-13?

    • The reverse recovery time is typically around 35ns, making it suitable for high-frequency applications.
  6. What is the maximum operating temperature of SBR8E45P5-13?

    • The maximum operating temperature is typically around 150°C, ensuring reliable performance in various environments.
  7. Does SBR8E45P5-13 have any special packaging requirements?

    • SBR8E45P5-13 is typically available in a TO-252 package, which provides good thermal performance and easy mounting.
  8. Can SBR8E45P5-13 be used in parallel to increase current handling capacity?

    • Yes, SBR8E45P5-13 can be used in parallel to increase current handling capacity in high-power applications.
  9. What are the typical applications where SBR8E45P5-13 outperforms standard diodes?

    • SBR8E45P5-13 outperforms standard diodes in applications requiring high efficiency, low power loss, and fast switching characteristics.
  10. Are there any recommended circuit design considerations when using SBR8E45P5-13?

    • It is recommended to minimize parasitic inductance and ensure proper heat sinking to maximize the performance and reliability of SBR8E45P5-13 in technical solutions.