2N7002H-7

Product Overview

The 2N7002H-7 is a small-signal N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) belonging to the category of electronic components. It is commonly used in various electronic circuits for switching and amplification purposes due to its low power consumption, high efficiency, and compact package.

Basic Information

• Category: Electronic Component
• Use: Switching and Amplification
• Characteristics: Low power consumption, High efficiency
• Package: SOT-23
• Essence: N-channel MOSFET
• Packaging/Quantity: Typically available in reels of 3000 units

Specifications

• Voltage Rating: 60V
• Current Rating: 115mA
• Power Dissipation: 200mW
• On-State Resistance: 5Ω

Detailed Pin Configuration

The 2N7002H-7 features three pins: Gate (G), Drain (D), and Source (S). The pin configuration is as follows: - Gate (G): Input terminal for controlling the flow of current - Drain (D): Output terminal for the current flow - Source (S): Terminal connected to the ground or common reference point

Functional Features

• Low Threshold Voltage: Enables efficient control of the switching operation
• Fast Switching Speed: Facilitates rapid on/off transitions
• Small Package Size: Ideal for space-constrained applications

Advantages and Disadvantages

Advantages

• Low Power Consumption
• High Efficiency
• Compact Package Size

Disadvantages

• Limited Voltage and Current Ratings
• Sensitivity to Static Electricity

Working Principles

The 2N7002H-7 operates based on the principle of field-effect modulation, where the voltage applied to the gate terminal controls the conductivity between the drain and source terminals. When a sufficient voltage is applied to the gate, it allows the flow of current from the drain to the source, effectively acting as a switch.

Detailed Application Field Plans

The 2N7002H-7 finds extensive use in various electronic applications, including: - Switching Circuits: Used to control the flow of current in digital and analog circuits - Amplification Circuits: Employed to amplify weak signals with minimal power loss - Voltage Level Shifting: Facilitates interfacing between devices with different voltage levels

Detailed and Complete Alternative Models

Several alternative models to the 2N7002H-7 include: - BS170: Similar N-channel MOSFET with higher voltage and current ratings - IRLML2502: Low threshold voltage MOSFET suitable for low-power applications - DMN10H220SK3: MOSFET with enhanced ESD protection for improved reliability

In conclusion, the 2N7002H-7 is a versatile electronic component with wide-ranging applications in the field of electronics, offering a balance of performance, size, and efficiency.

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