S29GL128N10FFI013

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Low power consumption
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a solid-state format
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Model: S29GL128N10FFI013
• Capacity: 128 gigabits (16 gigabytes)
• Access Time: 100 nanoseconds
• Supply Voltage: 3.0 to 3.6 volts
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Organization: 64 megawords x 16 bits

Detailed Pin Configuration

The S29GL128N10FFI013 has a total of 48 pins, which are assigned specific functions for proper operation. The pin configuration is as follows:

1. VCCQ - Power supply for I/O buffers
2. DQ15-DQ0 - Data input/output pins
3. A21-A0 - Address input pins
4. CE# - Chip Enable
5. OE# - Output Enable
6. WE# - Write Enable
7. RP# - Reset/Power-down
8. BYTE# - Byte Enable
9. RY/BY# - Ready/Busy
10. WP#/ACC - Write Protect/Acceleration
11. VSSQ - Ground for I/O buffers
12. NC - No Connection

(Note: This is a simplified representation. Refer to the datasheet for the complete pin configuration.)

Functional Features

• High-speed data transfer
• Reliable data retention
• Erase and program operations at the word level
• Built-in error correction codes (ECC)
• Sector protection and locking mechanisms
• Low power consumption during standby mode

Advantages

• Large storage capacity allows for extensive data storage
• High-speed read and write operations enable quick access to stored information
• Non-volatile memory ensures data retention even when power is lost
• Low power consumption prolongs battery life in portable devices
• Error correction codes enhance data integrity

Disadvantages

• Relatively higher cost compared to other forms of memory
• Limited endurance due to finite erase/write cycles
• Requires specialized programming equipment for initial setup
• Susceptible to physical damage from electrostatic discharge (ESD)

Working Principles

The S29GL128N10FFI013 utilizes a floating-gate transistor technology known as NOR flash memory. It stores digital information by trapping electric charge within insulated floating gates, which can be selectively programmed or erased. When reading data, the stored charge is detected and interpreted as binary information.

Detailed Application Field Plans

The S29GL128N10FFI013 is widely used in various electronic devices that require non-volatile storage, such as: - Solid-state drives (SSDs) - Digital cameras - Mobile phones - Tablets - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. S29GL064N90TFI020 - 64 gigabit parallel NOR flash memory
2. S29GL256P11TFI010 - 256 gigabit parallel NOR flash memory
3. S29GL512S10TFI010 - 512 gigabit parallel NOR flash memory
4. S29GL01GP11TFI010 - 1 terabit parallel NOR flash memory

(Note: These are just a few examples. There are numerous alternative models available from different manufacturers.)

This concludes the encyclopedia entry for S29GL128N10FFI013, a flash memory device widely used for data storage and retrieval in electronic devices.

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